| PART |
Description |
Maker |
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| TPC8203 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TPCF8104 TPCF810407 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)
|
Toshiba Semiconductor
|
| 2SK1717 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
Sanken electric
|
| 2SK3067 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCA8A04-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM6L13TU SSM6L13TU10 |
TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3J133TU-14 |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
| SSM3J134TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
| TPC8102 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC6101 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
TOSHIBA[Toshiba Semiconductor]
|
